GB/T 30653-2014

Active

Test method for crystal quality of III-nitride epitaxial layers

Ⅲ族氮化物外延片结晶质量测试方法

Standard Type
GBT
ICS
77.040.20
CCS
H21
Status
Active
Issue Date
2014-12-31
Implementation
2015-09-01
Centralized Committee
国家标准委
Issuing Authority
中华人民共和国国家质量监督检验检疫总局、中国国家标准化管理委员会

Application Summary AI generated

This standard specifies the test methods for evaluating the crystal quality of III-nitride epitaxial layers, such as gallium nitride (GaN) and aluminum nitride (AlN), using techniques like X-ray diffraction (XRD) and atomic force microscopy (AFM). It is applied in the semiconductor industry for quality control and characterization of epitaxial wafers used in optoelectronic devices (e.g., LEDs, laser diodes) and power electronics. The standard ensures consistent measurement of dislocation density, surface morphology, and crystalline perfection during manufacturing and research.

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Transparency note: The application summary and key sentences on this page were automatically generated by AI from the standard's original text. This content has not been human-verified and should not be used for compliance or regulatory purposes. Always refer to the official standard document from the issuing authority.